rev . a 7 5 2 5 e t h el ave n u e nor t h holly w ood, ca 91605 (8 1 8 ) 982-1 2 0 0 www . a d s e m i . c o m s pe c i f i c a t ions are s ubje c t to change without notice.
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - po 22 x1 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 1 / 5 / 10 phoenix, az. 85044 ?20 10 hvvi semiconductors, inc. all rights reserved. 2 h vv 1 2 1 4 - 1 4 0 ( preliminary datasheet ) l - band pulsed power transistor 1200 - 1400 mhz, 200 s pulse, 10% duty cycle for ground based radar applications the i n novative semiconductor company! ! ! ! ! ! ! ! ! ! ! ! ! ! the hvv1 2 1 4 - 1 4 0 device is capable of withstanding an output load mismatch corresponding to a 20:1 vswr at rated output power and nominal operating voltage across the frequency band of operation. ! ! ! ! ! ! notes: 1) rated at t case = 25? 2 ) all parameters measured under pulsed conditions at 1 4 0 w output power measured at the 10% point of the pulse with pulse width = 20 0 sec, duty cycle = 10 % and vdd = 50 v, idq = 100ma in a broadband matched test fixture. 3) amount of gate voltage required to attain nominal quiescent current. 4) guaranteed by design. "#$%&' ! ()*)$+,+* ! -)'.+ ! /01, ! - 2"" ! 2*)10 3 "&.*4+!-&',)5+ ! 67 ! - ! - 8 "" ! 8),+ 3 "&.*4+!-&',)5+ ! 3 9: ;!9: ! - ! < 2" =$)>? ! 2*)10!@.**+0, ! 9a ! b ! ( 2 9 ! (&c+*!21dd1e),1&0 ! fga ! h ! ( 10 ! <0e.,!(&c+* ! f ia ! h ! j " ! ",&*)5+!j+$e+*),.*+ ! 3 a: ! ,& ! k97: ! l@ ! j m ! m.04,1&0!j+$e+*),.*+ ! g:: ! l@ ! !"#$%& ' ()*)#+,+* ' -). ' /01, ' ? m@ g ! jn+*$)'!o+d1d,)04+ ! :i 7a ! l@ph ! "#$%&' ! ()*)$+,+* ! j+d,!@&0q1,1&0 ! r)> ! /01,d ! srj g ! s&)q! r1d$),4n! j&'+*)04+ ! t!u!9 a: :!rvw ! g:x9 ! -"ho ! "#$%&' ! ()*)$+,+* ! @&0q1,1&0d ! r10 ! j#e14)' ! r)> ! /01, ! - yo=2""? ! 2*)10 3 "&.*4+!y*+)zq&c0 ! -8"u:-;<2u 7 $b ! 67 ! 9: g ! 3 ! - ! < 2"" ! 2*)10!s+)z)5+!@.**+0, ! -8"u:-;-2"u 7: - ! 3 ! 7: ! 9:: ! [b ! < 8"" ! 8),+!s+)z)5+!@.**+0, ! -8"u7-;-2"u:- ! 3 ! 9 : ! 9:: ! 0b ! 8 ( g ! (&c+*!8)10 ! tu 9 a:: rvw ! 9 \ ! 96i7 ! 3 ! qy ! ! /01,d ! , * a ! o1d+!j1$+ ! tu 9 a:: rvw ! 3 ! c g7 ! 7: ! 0" ! , _ a ! t)''!j1$+ ! tu9 a:: rvw ! 3 ! c 9 7 ! 7: ! 0" ! (2 a ! (.'d+!2*&&e ! tu9 a:: rvw ! 3 ! :i 77 ! :i \ ! qy ! pulse characteristics electrical characteristics absolute maximum rating (iec 134) thermal/ruggedness performance
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - po 22 x1 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 1 / 5 / 10 phoenix, az. 85044 ?20 10 hvvi semiconductors, inc. all rights reserved. 3 h vv 1 2 1 4 - 1 4 0 ( preliminary datasheet ) l - band pulsed power transistor 1200 - 1400 mhz, 200 s pulse, 10% duty cycle for ground based radar applications the i n novative semiconductor company! typical device performance under class ab mode of operation and rf pulse condi tions of 20 0 s pulse width and 10 % duty cycle with vdd = 50 v and idq = 100m a . the device was measured at 1 400 mhz. !!!!!!!!!!! ! typical device performance under class ab mode of operation and rf pulse conditions of 20 0 s pulse width and 10 % duty cycle with vdd = 50 v and idq = 100m a . the device was measured at 1 400 mhz.
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - po 22 x1 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 1 / 5 / 10 phoenix, az. 85044 ?20 10 hvvi semiconductors, inc. all rights reserved. 4 h vv 1 2 1 4 - 1 4 0 ( preliminary datasheet ) l - band pulsed power transistor 1200 - 1400 mhz, 200 s pulse, 10% duty cycle for ground based radar applications the i n novative semiconductor company! ! ! ! !!!!!! !!!!!! ! typical device performance under class ab mode of operation and rf pulse condi tions of 20 0 s pulse width and 10 % duty cycle with vdd = 50 v and idq = 100m a . the device was measured at 120 w . ! !!!!!! !!!!!! ! typical device performance under class ab mode of operation and rf pulse condi tions of 20 0 s pulse width and 10 % duty cycle with vdd = 50 v and idq = 100m a . the device was measured at 120 w .
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - po 22 x1 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 1 / 5 / 10 phoenix, az. 85044 ?20 10 hvvi semiconductors, inc. all rights reserved. 5 h vv 1 2 1 4 - 1 4 0 ( preliminary datasheet ) l - band pulsed power transistor 1200 - 1400 mhz, 200 s pulse, 10% duty cycle for ground based radar applications the i n novative semiconductor company! typical device performance under class ab mode of operation at 1400mhz and pulse conditions of 200 ? pulse width and 10 % duty cycle with vdd = 50 v and idq = 100ma. the high voltage silicon vertical technology shows less than 1.6db of power degradation over an extreme ca se temperature rise of 125 c . ! hvv1 214 - 1 4 0 performance over temperature
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - po 22 x1 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 1 / 5 / 10 phoenix, az. 85044 ?20 10 hvvi semiconductors, inc. all rights reserved. 6 h vv 1 2 1 4 - 1 4 0 ( preliminary datasheet ) l - band pulsed power transistor 1200 - 1400 mhz, 200 s pulse, 10% duty cycle for ground based radar applications the i n novative semiconductor company! frequency zin* (ohms) zout* (ohms) 1200mhz 1.7 - j4.1 4.5 - j7.6 1250mhz 1.6 - j3.4 4.1 - j6.7 1300mhz 1.5 - j2.9 3.9 - j6.0 1350mhz 1.3 - j2.4 3.6 - j5.2 1400mhz 1.2 - j1.8 3.4 - j4.5 zin* zout* output impedance matching network input impedance matching network test circuit impedances ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! !!!! ! z o = 10
z in * z out * 1030mhz 1030mhz
p art d escri p t i on p ar t n umber m a n u f a c turer c 1, c 2: 1 0 0 pf a t c 1 0 0 b c h i p c a p a c i t or 1 0 0 b 1 0 1j p 5 0 0x a t c c 3: 2.4 p f a t c 1 0 0 b c h i p c a p a c i t or 1 0 0 b 2 r 4j p 5 0 0x a t c c 4: 1.2 p f a t c 1 0 0 b c h i p c a p a c i t or 1 0 0 b 1 r 2j p 5 0 0x a t c c 5: 3.9 p f a t c 1 0 0 b c h i p c a p a c i t or 1 0 0 b 3 r 9j p 5 0 0x a t c c 6: 2.4 p f a t c 1 0 0 b c h i p c a p a c i t or 1 0 0 b 2 r 4j p 5 0 0x a t c c 7: 1 5 p f a t c 1 0 0 b c h i p c a p a c i t or 1 0 0 b 1 5 0j p 5 0 0x a t c c 8,c 9 : 4 7 p f a t c 1 0 0 b c h i p c a p a c i t or 1 0 0 b 4 7 0j p 5 0 0x a t c c 1 0 , c 1 2 : 1 k p f 1 0 0 v c h i p c a p a c i t or ( x 7 r 1 2 0 6 ) c 1 2 0 6 c 1 0 2 k 1 r a c t u k emet c 1 1 , c 1 3 : 1 0 k p f 1 0 0 v c h i p c a p a c i t or ( x 7 r 1 2 0 6 ) c 1 2 0 6 c 1 0 3 k 1 r a c t u k emet c 1 4 : 1 0 u f 6 3 v e l ect f k s m d p c e 3 4 7 9 c t - n d d ig i - k e y c 1 5 , c 1 6 : 1 0 0 uf 6 3 v e l ect f k s m d p c e 3 4 8 3 c t - n d d ig i - k e y r 1: 1 0 o hms c h i p r e s i s t or ( 1 2 0 6 ) e r j8ge y j1 0 0v p a n as o n i c r 2: 1 k o hms c h i p r e s i s t or ( 1 2 0 6 ) e r j8ge y j1 0 2v p a n as o n i c r f c o n n ecto r s t y p e " n " r f conn e c t ors 5 9 1 9 c c - t b - 7 c o a x i com d c d r a i n c o nn c o n n e c t or jac k b a n a n a n y l o n r ed j1 5 1-nd d ig i - k e y d c g r o u n d c o n n. c o n n e c t or jac k b a n a n a n y l o n b l ack j1 5 2-nd d ig i - k e y d c g ate c o n n. c o n n e c t or jac k b a n a n a n y l o n g r e e n j1 5 3-nd d ig i - k e y p c b b o a r d p c b : a r l o n , 3 0 m i l s t h i c k , 2.55 d i e l ect r i c , 2 o z c o p p e r d s e l ect r o n i cs d e v i ce c l amp c o o l i n n o v a ti o n n y lo n cla m p f o o t f x t 0 0 0 1 5 8 c o o l i n n o v ati o n h e a t s i nk co o l i n n o v a ti o n s a lu m in u m h e a t s ink 3-252 5 1 0 r s 3 3 9 4 c o o l i n n o v ati o n s . s . s c r e w s ( 4) 4-40 x 1 /4 s ta i n l e s s s te e l s o c k et he x he a d p 2 4 2 3 93 c o p p e r s t ate b o l t a l l o y s c r e w s ( 4) 4 -4 0 x 1 / 2 a l l o y s o ck e t ca p scr e w h e x h e a d s c a s - 0 4 4 0 - 0 8 c s m a l l p ar t s i nc m eta l w as h er ( 6) # 4 w a s h e r z i n c p l t d s t e e l l o ck z s l w - 0 0 4-m s m a l l p ar t s i nc a l l o y s c r e w s ( 2) 4-40 x 3/4 a l l o y s oc k et c a p s c r e w h e a d s c a s - 0 4 4 0 - 1 2 m s m a l l p ar t s i nc d e m o n st r a t i o n b o a r d o u t l i n e e x a m p l e o f a d e m o n st r a t i o n c i r c u i t h v v 1 12 1 4 - 1 0 0 d e m o n st r a t i o n c i r c u it b o a r d b i l l o f m a t e r i a l s h v v 1 2 1 4 - 1 4 0 ( p relimina r y dat a sheet ) l - ban d pu l s ed p ower t r an s i s tor 1200 - 1 4 00 m h z , 20 0 s pu l s e, 1 0 % duty c y c l e fo r g r o und b a s e d radar a pp li c at i ons the i n nov a ti v e s e m i c ond u c t o r comp a ny!
p a c k a g e d i m e n s i o n s no t e : d r a w i n g i s n o t a c t u a l s i z e . s o u r c e d r a i n g a t e asi p a r t number jd a te c ode inches mm asi s e m i c o n du c t o r , i n c . ( asi ) r e s e r v e s t h e r i g h t t o m a k e c h a n g e s to i n f o r m a t i o n p u bl i s h e d i n t h i s d o c u m e n t a t a n y t i m e a n d w i t h o ut n o t i c e . t h i s do c u m e n t s up e r s e d e s a n d r e p l a c e s a l l i n f o r m a t i o n s up p l i e d p r i o r t o t h e pub l i c a t i o n h e r e o f . i n f o r m a t i o n i n t h i s d o c u m e n t i s b e l i e v e d t o b e a c c u r a t e a n d r e l i a b l e . h o w e v e r , asi d o e s n o t g i v e a n y r e p r e s e n t a t i o n s o r w a r r a n t i e s , e i t h e r e x p r e s s o r i m p l i e d , a s to t h e a c c u r a c y o r c o m p l e t e n e s s o f s u c h i n f o r m a t i o n a n d s h a l l h a v e n o l i a bi l i t y no liability for conse- -quences resulting from the use of such information. no l i c e n s e , e i t h e r e x p r e s s e d o r i m p l i e d , i s c o n v e y e d u n d e r a n y asi i n t e l l e c t u a l p r o p e r t y r i g h t s , i n c l u d i ng a n y p a t e n t r i g h t s .
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